SeeDevice Announces PAT-PD(TM) Smart Vision Sensor With Quantum Tunneling, Dramatically Improving Imaging Quality

SeeDevice is a leader in the development of smart vision sensors using quantum tunneling technology to see further,sense faster,and deliver higher-quality images in a wider variety of lighting scenarios. PAT-PD sensors are designed to perform significantly better than existing optical sensors by using quantum tunneling effect to capture a signal with as little as one photon.

LOS ANGELES,Aug. 18,2020 --SeeDevice,a pioneer in quantum image sensing technology,today announced the general licensing availability of Photo Assisted Tunneling - Photo Detector (PAT-PDTM). The agreement allows partners to easily integrateSeeDevice'ssmart sensing technology into their products.

"PAT-PD uses quantum tunneling to rewrite a lot of the current specifications for light sensors. placing it in an entirely new category of photon sensing capability," saidHoomanDastghaib,CEO ofSeeDevice.

PAT-PD expands the photosensitive light range of CMOS sensors beyond visible light,into the near infrared (NIR) spectrum (between 300nm-1,600nm) with plans to expand to 2,000nm with their next-generation sensor,enabling shortwave infrared (SWIR) frequencies to maintainhigh visual quality sensing in low-light and near no-light use cases.

Additionally,the PAT-PD sensor increases photo-sensitivity to 106 A/W,while maintaining a Signal to Noise Ratio (SNR) of over 60dB at room temperature,delivering an image signal that is consistently sharp and crisp.

Reaction time is also reduced from microseconds to sub-nanoseconds while boosting dynamic range to 100dB linear and 150dB non-linear,allowing the PAT-PD sensor to capture images in record time while maintaining an extremely high-fidelity image.

SeeDeviceachieves these results using standard CMOS fabrication process allowing for easy integration in mixed-signal process and avoidingexpensive exotic materials and manufacturing processes to achieve similarresults.

Current photo sensors work by directing incoming light to an array of photo-diodes and photo-transistors that convert the light into an electric current which is amplified and then converted into viewable pixels using software. Image sensors using photo-diodes require as much light as possible to generate a high-quality imageso,unless pictures are taken in bright sunlight or perfect indoor lighting conditions,image quality degrades significantly in lower-light conditions. Sensitivity of photo-diodes is measured in uV per electron generated or amps/watt (A/W). While typical photo-diode sensors generate 0.15-0.25 A/W,PAT-PDuses quantum tunneling to producean astounding 108 A/W,surpassing the performance of today's leading CMOS image sensors.

Quantum tunneling allows a photon-activated current flow to trigger using a fraction of the photons normally required in a photo-diode-based design. This allows thePAT-PD sensor to trigger with just a single photon,generating a currentwith unprecedented efficiency and creating asignal with significantly less input over a far wider range of wavelengths. Using a PAT-PD silicon-based CMOSimage sensor,devices will be able to conveygranular-level sharp details,even in extremelylow light conditions,utilizing infrared,near infrared,and short-wave infrared frequencies.

Media Contact:

MarkShedd

Phone: +1 (657) 325-4022

Email: mark.shedd@seedevice.com

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